The NP9926BSR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
VDS =20V,ID=6A
RDS(ON)(Typ.)=28mΩ @VGS=2.5V
RDS(ON)(Typ.)=24mΩ @VGS=4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current